Chip on Carrier with 2.5mm SemiNex Chip
$436.00
SemiNex’s Chip on Carrier (COC) Laser Diodes are an excellent choice for customers seeking high power state-of-art performance in a low cost standard submount design. These lasers are provided across the InP wavelength range of 12xx to 19xx and come in a variety of configurations including single mode and multimode devices for both CW and pulsed operation. Applications for SemiNex’s COC devices include OEM medical, DPSS pump source, military targeting, OTDR, range finding and illumination. Custom wavelengths and configurations available upon request.
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Wavelength: 1310 nm
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Aperture: 4 um
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Mode: Single Mode
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Junction: Single
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Cavity Length: 2500 µm
Symbol | Value | Units | |
---|---|---|---|
Optical | |||
Wavelength | λc | nm(+/-20) | |
Output Power (CW) | Po | watts | |
Spectral Width | Δλ | nm 3dB | |
Cavity Length | CL | μm | |
Junction Type | |||
Emitter Height | H | μm | |
Slow Axis Divg. | θ_parallel | deg FWHM | |
Fast Axis Divg. | θ_perp | deg FWHM | |
Number of emitters | |||
Pulse Width | PW | ns | |
Duty Cycle | DC | % |
Symbol | Value | Units | |
---|---|---|---|
Electrical | |||
Power Conversion Eff. | η | Min | |
Operating Current | Iop | A | |
Operating Voltage | Vop | V | |
Series Resistance | Rs | ohm |
Symbol | Value | Units | ||
---|---|---|---|---|
Mechanical | ||||
Weight | g | |||
Operating Temp. | °C |
Other | |
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Specification Notes | Front Facet Reflectivity: <0.1% Rear Facet Reflectivity: < 98% |
SemiNex delivers SOAs with the highest gain and available saturation power
at infrared wavelengths. When necessary we will further optimize the design of
our InP SOA to meet our customers’ specific optical and electrical performance needs.
Single waveguide or arrays are tested to meet customer and market performance demands.
Typical results and packaging options are shown.
Contact SemiNex for additional details or performance demands.Click here to see product information sheet
Applications
Features