19 Emitter Laser Diode Bar
$0.00
SemiNex’s High Power Multimode Laser Bars are available at standard wavelengths in the 12xx to 19xx nm region. Production bars have a cavity length of 2.5 or 1.5 mm with 19 emitters and a 500 um pitch. These high power InP laser bars perform best when properly mounted using Indium solder.
Click here to see product information sheet
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Wavelength: 1310 nm
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Aperture: 95 um
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Mode: Multi Mode
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Junction: Single
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Cavity Length: 2500 µm
| Symbol | Value | Units | |
|---|---|---|---|
| Optical | |||
| Wavelength | λc | nm(+/-20) | |
| Output Power (CW) | Po | watts | |
| Spectral Width | Δλ | nm 3dB | |
| Cavity Length | CL | μm | |
| Junction Type | |||
| Slope Efficiency | ηo | W/A | |
| Slow Axis Divg. | θ_parallel | deg FWHM | |
| Fast Axis Divg. | θ_perp | deg FWHM | |
| Number of emitters | |||
| Pulse Width | PW | ns | |
| Duty Cycle | DC | % |
| Symbol | Value | Units | |
|---|---|---|---|
| Electrical | |||
| Power Conversion Eff. | η | Min | |
| Operating Current | Iop | A | |
| Operating Voltage | Vop | V |
| Symbol | Value | Units | ||
|---|---|---|---|---|
| Mechanical | ||||
| Weight | g |
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers’ specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.Click here to see product information sheet
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